Multiple resistive states in vanadium dioxide (VO2) memristive devices

Xing Gao, H. Hilgenkamp

Research output: Contribution to conferencePosterAcademic

Abstract

Vanadium dioxide (VO2) has been widely studied for its prominent insulator-metal transition (IMT) near room temperature and potential applications in novel memory devices and brain-inspired computing. We report on the fabrication of in-plane VO2 metal-insulator-metal (MIM) structures and reproducible switching measurements in these two-terminal devices. The VO2 film grown on TiO2 substrate by pulsed laser deposition (PLD) was etched into bridge structures with different sizes. Resistive switching can be achieved by applying current/voltage bias, which creates Joule heating in the device and triggers the IMT. We observe repeatable unipolar switching and a clear correlation between the switching power and device size. This approach provides a gateway to mimic neurons and synapses with hardware components, allowing for much denser and complex neural networks.
Original languageEnglish
Publication statusPublished - 18 Jan 2021
EventPhysics@Veldhoven 2021: The Magic of Physics - Online Event, Netherlands
Duration: 18 Jan 202120 Jan 2021
https://www.physicsveldhovenonline.nl/

Conference

ConferencePhysics@Veldhoven 2021
CountryNetherlands
CityOnline Event
Period18/01/2120/01/21
Internet address

Keywords

  • Resistive switching
  • VO2
  • Volatile memristor
  • Memristor

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